Nrog rau kev lag luam muaj zog, kev siv hluav taws xob thoob ntiaj teb tau nce xyoo los ntawm lub xyoo. Hauv Suav teb, kev tsav tsheb qias neeg tau dhau los ua ib qho tseem ceeb ntawm cov pa phem, ua qhov tseem ceeb ntawm cov hmoov tshauv thiab photochemical smog pa phem, thiab qhov tseem ceeb ntawm kev tsav tsheb qias neeg muaj kuab paug tiv thaiv thiab tswj tau ua kom pom tseeb. Lub zog txuag thiab kev ua haujlwm tawm los txo cov teebmeem tau dhau los ua cov teebmeem loj hauv kev txhim kho kev lag luam tsheb. Yog li, siv zog tsim lub zog tshiab tsheb yog lub hom phiaj kev ntsuas kom ua tiav kev txuag hluav taws xob thiab kev tso tawm kom txo qis thiab txhawb txoj kev txhim kho txuas ntxiv ntawm Tuam Tshoj txoj kev lag luam tsheb
Tam sim no, lub tshuab tsav hluav taws xob ntawm EV (Cov Hluav Taws Xob Hluav Taws Xob) thiab HEV (Kev Siv Hluav Taws Xob Hluav Taws Xob) yog feem ntau ntawm cov khoom siv silicon (Si) raws li lub zog siv hluav taws xob. Nrog rau kev txhim kho hluav taws xob tsheb, ntau dua cov kev xav tau muab tso rau qhov miniaturization thiab hnyav dua ntawm lub zog hluav taws xob. Txawm li cas los xij, vim muaj cov khoom siv txwv, cov khoom siv Si-based siv hluav taws xob tau txav los txog lossis txawm mus txog qhov tsis txaus ntseeg ntawm lawv cov ntaub ntawv hauv ntau qhov chaw. Yog li no, ntau lub tuam txhab tsim tsheb muaj kev cia siab rau ib tiam tshiab ntawm silicon carbide (SiC) cov cuab yeej siv fais fab.
Thib peb-tiam semiconductors, sawv cev los ntawm silicon carbide, muaj qhov zoo tseem ceeb dua li cov khoom siv hluav taws xob semiconductor xws li monocrystalline silicon thiab gallium arsenide, xws li siab thermal conductivity, siab tawg teb lub zog, siab saturation hluav taws xob hluav taws xob txav, thiab siab sib zog. Tshuaj lom neeg ruaj khov thiab muaj zog hluav taws xob tiv thaiv tau txiav txim siab tias silicon carbide muaj qhov chaw tsis ruaj nyob hauv ntau lub teb. Mas raws li nram no:
(1) SiC muaj qhov kub zoo (ntawm 4.9 W / cm • K), uas yog 3.3 npaug ntawm Si. Yog li no, cov khoom siv SiC tau ua kom muaj qhov cua sov ua kom zoo. Raws li kev xav, SiC lub zog hluav taws xob muaj peev xwm ua haujlwm ntawm lub ntsuas kub ntawm 175 ° C, yog li cov ntim ntawm lub ntim hluav taws xob tau txo tsawg, uas tsim nyog rau ua cov cuab yeej kub.
(2) SiC muaj qhov chaw ua teb muaj zog siab, thiab nws cov hluav taws xob hauv teb yog 10 zaug ntawm Si, yog li nws tsim nyog rau cov hloov hluav taws xob siab, thiab muaj lub zog loj tuav lub peev xwm, ua rau SiC cov khoom haum rau ua lub zog siab, siab-siv tam sim no.
(3) SiC muaj qhov kev kub siab ntawm lub tshuab hluav taws xob tsis zoo, uas yog ob zaug ntawm tus nqi Si, thiab tsis tshua muaj ntsej muag nyob ntawm cov teb siab, thiab nws cov peev txheej siab ua tau zoo heev. Yog li no, cov khoom siv SiC haum rau cov khoom siv loj hauv siab.
SiC ib leeg siv lead ua tseem yog lub hnub nyoog tshaj plaws thib peb tiam semiconductor khoom hauv kev npaj thev naus laus zis. Yog li no, SiC yog ib qho khoom siv zoo tshaj plaws rau kev tsim cov kub, siab, lub zog loj, ntsuas hluav taws xob ntau.
Nws paub zoo tias lub zog ceev, cov hluav taws xob muaj zog, qhov siab tam sim no ntawm IGBT lub zog hluav taws xob yog cov tseem ceeb tshaj plaws hauv kev sib xyaw. Qhov siab zog ntawm qhov hluav taws xob tsawg dua, kev tsim nruj ntawm cov qauv tsav hluav taws xob, thiab lub zog loj dua hauv tib lub ntim. Vim tias lub siab tam sim no ntawm SiC cov khoom siv (piv txwv li, Infineon cov khoom lag luam txog li 700 A / cm2), tag nrho SiC zog module pob loj dua me dua li Si IGBT zog module ntawm tib lub zog, zoo heev txo qhov loj me ntawm cov fais fab tuag module.
